How GaN FETs with integrated drivers and self-protection will enable the next generation of industrial power designs - Power management - Technical articles - TI E2E support forums
New gate driver extends TI's family of GaN FET driver ICs, Texas Instruments Deutschland GmbH, Press release - PresseBox
Gallium Nitride (GaN) - TI | Mouser
GaN: Pushing the limits of power density & efficiency | TI.com
TI adds small and fast drivers to GaN power portfolio
Texas Instruments Releases Reference Design for a 99% Efficient GaN Inverter Power Stage - News
Gallium Nitride (GaN) - TI | Mouser
LMG3410R070 600V 70mΩ GaN Power Stage - TI | Mouser
New TI portfolio of ready-to-use, 600-V GaN FET power stages supports applications up to 10 kW
Texas instruments launch 600V/12A GaN IC
New TI portfolio of ready-to-use, 600-V GaN FET power stages supports applications up to 10 kW
GaN demystified – Frequently asked questions | TI.com Video
GaN Power Stage Allows High-Density Power Conversion Designs
Gallium nitride: Understanding TI's portfolio and how to use it to enhance industrial designs | TI.com Video
Gallium nitride (GaN) ICs | TI.com
Gallium nitride (GaN) ICs | TI.com
LMG3410R070 data sheet, product information and support | TI.com
Chicony Power and TI join forces to bring GaN technology to next-generation energy-efficient laptop power adapter | news.ti.com
Q&A with Heather McCulloh — GaN Integration Section Manager, Texas Instruments - Dallas Business Journal
Texas Instruments' LMG1020 Low-Side GaN Driver, Ideal for High-Speed LiDAR and TOF Applications, Now Shipping from Mouser España
LMG3410R070 data sheet, product information and support | TI.com
LMG1205HBEVM Evaluation board | TI.com
